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INTEGRATED CIRCUITS
DATA SHEET
UAA2077BM 2 GHz image rejecting front-end
Product specification Supersedes data of July 1995 File under Integrated Circuits, IC03 1995 Dec 13
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
FEATURES * Low-noise, wide dynamic range amplifier * Very low noise figure * Dual balanced mixer for over 25 dB on-chip image rejection * IF I/Q combiner at 188 MHz * On-chip quadrature network * Down-conversion mixer for closed-loop transmitters * Independent TX/RX fast ON/OFF power-down modes * Very small outline packaging * Very small application (no image filter). APPLICATIONS * 1800 MHz front-end for DCS1800 hand-portable equipment * Compact digital mobile communication equipment * TDMA receivers e.g. PCS and RF-LANS. GENERAL DESCRIPTION UAA2077BM contains both a receiver front-end and a high frequency transmit mixer intended to be used in mobile telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. The main advantage of the UAA2077BM is its ability to provide over 25 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed. QUICK REFERENCE DATA SYMBOL VCC ICC(RX) ICC(TX) ICC(PD) Tamb supply voltage receive supply current transmit supply current supply current in power-down operating ambient temperature PARAMETER MIN. 3.6 21.5 10.5 - -30 4.0 26.5 13.5 - +25 TYP.
UAA2077BM
Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45 and 135 respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. For instance, signals presented at the RF input at the LO + IF frequency are rejected through this signal processing while signals at the LO - IF frequency can form the IF signal. An internal switch enables the upper or lower image frequency to be rejected. The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45 and 135 phase shifting and a combining network for image rejection. The IF driver has differential open-collector type outputs. The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The centre frequency of the phase shifter is adjustable for maximum image rejection in a given band. The all-pass filters outputs are buffered before being fed to the receive mixers. The transmit section consists of a low-noise amplifier and a down-conversion mixer. In the transmit mode an internal LO buffer is used to drive the transmit IF down-conversion mixer. All RF and IF inputs or outputs are balanced. Pins RXON, TXON and SXON enable a selection to be made of whether to reject the upper or lower image frequency and control of the different power-down modes. Special care has been taken for fast power-up switching.
MAX. 5.3 33.5 18 50 +85 V
UNIT mA mA A C
ORDERING INFORMATION TYPE NUMBER UAA2077BM PACKAGE NAME SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm VERSION SOT266-1
1995 Dec 13
2
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
BLOCK DIAGRAM
UAA2077BM
n.c.
handbook, full pagewidth
n.c. 7
TXON 11 MIXER
RXON 12 +45o
SXON 9
4 3
UAA2077BM
VCCLNA
17 RFINA RFINB 5 6 LNA low-noise amplifier +135o IF COMBINER 18 8
IFA
IFB
LNAGND
RECEIVE SECTION
VCCLO 15
TRANSMIT SECTION
VQUADLO
10
QUADRATURE PHASE SHIFTER
MIXER 19 TXOA TXOB
LOGND
16
20
LOCAL OSCILLATOR SECTION
14 LOINA 13 LOINB 2 1
MGD154
TXINB TXINA
Fig.1 Block diagram.
1995 Dec 13
3
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
PINNING SYMBOL TXINA TXINB VCCLNA n.c. RFINA RFINB n.c. LNAGND SXON VQUADLO TXON RXON LOINB LOINA VCCLO LOGND IFA IFB TXOA TXOB PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION transmit mixer input A (balanced) transmit mixer input B (balanced) supply voltage for LNA, IF parts and TX mixer not connected RF input A (balanced) RF input B (balanced) not connected ground for LNA, IF parts and TX mixer SX mode enable (see Table 1) input voltage for LO quadrature trimming TX mode enable (see Table 1) RX mode enable (see Table 1) LO input B (balanced) LO input A (balanced) supply voltage for LO parts ground for LO parts IF output A (balanced) IF output B (balanced) transmit mixer IF output A (balanced) transmit mixer IF output B (balanced)
handbook, halfpage
UAA2077BM
TXINA TXINB VCCLNA n.c. RFINA RFINB n.c. LNAGND SXON
1 2 3 4 5
20 TXOB 19 TXOA 18 IFB 17 IFA 16 LOGND
UAA2077BM
6 7 8 9 15 VCCLO 14 LOINA 13 LOINB 12 RXON 11 TXON
MGD155
VQUADLO 10
Fig.2 Pin configuration.
1995 Dec 13
4
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
FUNCTIONAL DESCRIPTION Receive section The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type, the whole internal architecture is fully differential. The local oscillator, shifted in phase to 45 and 135, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45 and 135 respectively, amplified and recombined internally to realize the image rejection. Balanced signal interfaces are used for minimizing crosstalk due to package parasitics.
UAA2077BM
The IF output is differential and of the open-collector type. Typical application will load the output with a differential 1 k load; for example, a 1 k resistor load at each IF output, plus a differential 2 k load consisting of the input impedance of the IF filter or the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 2 k load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. Fast switching, ON/OFF, of the receive section is controlled by the hardware input RXON.
handbook, full pagewidth
VCCLNA
MIXER
IF amplifier
+45o
IFA RFINA RFINB LNA LNAGND IF amplifier +135o
MGD157
MIXER
IF COMBINER IFB
LOIN
RXON
Fig.3 Block diagram, receive section.
1995 Dec 13
5
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
Local oscillator section The local oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. The centre frequency of the receive band is adjustable by the voltage on pin VQUADLO. This should be achieved by connecting a resistor between VQUADLO and VCC. Over 25 dB of image rejection can be obtained by an optimum resistor value. A synthesizer-ON mode (SX mode) is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering the receive or transmit mode. This mode is active when SXON = 1. Transmit mixer
UAA2077BM
This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is down-converted to a modulated transmit IF frequency, phase-locked with the baseband modulation. The IF outputs are high-impedance (open-collector type). Typical application will load the output with a differential 500 load; for example, a 500 resistor load, connected to VCC for DC path, at each TX output, plus a differential 1 k consisting of the input impedance of the matching network for the following TX part. The mixer can also be used for frequency up-conversion. Fast switching ON/OFF, of the transmit section is controlled by the hardware input TXON.
to RX
handbook, halfpage
VCCLO
handbook, halfpage
TX MIXER TXOA TXOB
LOIN VQUADLO QUAD
MGD153
LOGND
to TX
MGD156
TXON TXINB TXINA
LOINA
LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON LOW LOW HIGH LOW LOW HIGH HIGH HIGH 1995 Dec 13 RXON LOW HIGH LOW LOW HIGH LOW HIGH HIGH SXON LOW LOW LOW HIGH HIGH HIGH LOW HIGH power-down mode RX mode, fLO < fRF: receive section and LO buffers to RX on TX mode: transmit section and LO buffers to TX on SX mode: complete LO section on SRX mode, fLO < fRF: receive section on and SX mode active STX mode: transmit section on and SX mode active RX mode, fLO > fRF: receive section and LO buffers to RX on SRX mode, fLO > fRF: receive section on and SX mode active 6
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC GND Pi(max) Tj(max) Pdis(max) Tstg supply voltage maximum power input maximum operating junction temperature maximum power dissipation in quiet air storage temperature PARAMETER - - - - -65 difference in ground supply voltage applied between LOGND and LNAGND - MIN.
UAA2077BM
MAX. 9.0 0.6 +20 +150 250 +150 V V
UNIT
dBm C mW C
THERMAL CHARACTERISTICS SYMBOL Rth j-a HANDLING All pins withstand the ESD test in accordance with MIL-STD-883C class 2 (method 3015.5), except pins LOINA and LOINB which withstand 1500 V (class 1). PARAMETER thermal resistance from junction to ambient in free air VALUE 120 UNIT K/W
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
DC CHARACTERISTICS VCC = 4 V; Tamb = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN.
UAA2077BM
TYP.
MAX.
UNIT
Pins: VCCLNA and VCCLO VCC ICC(RX) ICC(TX) ICC(PD) ICC(SX) ICC(SRX) ICC(STX) Vth VIH VIL IIH IIL VI IO VI IO VLOIN Note 1. The referenced inputs should be connected to a valid CMOS input level. supply voltage supply current in RX mode supply current in TX mode supply current in power-down mode supply current in SX mode supply current in SRX mode supply current in STX mode over full temperature range 3.6 21.5 10.5 - 5.5 - - - 0.7VCC -0.3 pins at VCC - 0.4 V pins at 0.4 V -1 -1 - - - - - 4.0 26.5 13.5 - 7.5 29 18 5.3 33.5 18 50 10 - - - VCC 0.8 +1 +1 - - - - - V mA mA A mA mA mA
Pins: RXON, TXON and SXON CMOS threshold voltage HIGH level input voltage LOW level input voltage HIGH level static input current LOW level static input current note 1 1.25 - - - - V V V A A
Pins: RFINA and RFINB DC input voltage level receive section on 2.0 V
Pins: IFA and IFB DC output current receive section on 2.5 mA
Pins: TXINA and TXINB DC input voltage level transmit section on 2.0 V
Pins: TXOA and TXOB DC output current transmit section on 0.9 mA
Pins: LOINA and LOINB DC input voltage level RXON, TXON or SXON HIGH 3.3 V
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
AC CHARACTERISTICS VCC = 4 V; Tamb = -30 to +85 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. - -
UAA2077BM
TYP.
MAX. - -
UNIT pF
Receive section (receive section enabled) RiRX CiRX RF input resistance (real part of the parallel input impedance) RF input capacitance (imaginary part of the parallel input impedance) RF input frequency return loss on matched RF input balanced; note 1 conversion power gain differential RF inputs to differential IF outputs loaded to 1 k differential between 1805 and 1880 MHz; note 2 Tamb = -30 to +25 C; note 2 Tamb = +25 to +85 C; note 2 CP1RX DES3 1 dB compression point 3 dB desensitisation point differential RF inputs to differential IF outputs; note 1 interferer frequency offset: 3 MHz; differential RF inputs to differential IF outputs; note 1 balanced; at 1850 MHz balanced; at 1850 MHz 60 1
fiRX RLiRX GCPRX
1800 11 17
- 15 20
2000 - 23
MHz dB dB
Grip G/T
gain ripple as a function of RF frequency gain variation with temperature
- -20 -40 -26 -
0.2 0 -30 -23 -30
- +10 -20 - -
dB mdB/C mdB/C dBm dBm
interferer frequency offset: 20 MHz; - differential RF inputs to differential IF outputs; note 1 IP2DRX IP3RX NFRX ZLRX RLiRX foRX IRRX 2nd-order intercept point 3rd-order intercept point overall noise figure differential RF inputs to differential IF outputs; note 2 differential RF inputs to differential IF outputs; note 2 differential RF inputs to differential IF outputs; notes 2 and 3 +15 -23 - - 11 170 VQUADLO tuned fLO < fRF; fIF = 188 MHz; note 4 Local oscillator section (receive section enabled) fiLO RiLO CiLO LO input frequency LO input resistance (real part of the parallel input impedance) LO input capacitance (imaginary part of the parallel input impedance) balanced balanced 1600 - - 20 25
-27
-
dBm
+22 -17 4.3 1 15 188 - 32 - 45 2
- - 5.0 - - 210 - -
dBm dBm dB k dB MHz dB dB
typical application IF output load balanced impedance return loss on matched IF input IF frequency range rejection of image frequency balanced; note 1
2200 - -
MHz pF
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077BM
SYMBOL RLiLO RLiLO PiLO RILO Rtune
PARAMETER return loss on matched input (including standby mode) return loss variation between SX, SRX and STX modes LO input power level reverse isolation image rejection tuning resistor note 1
CONDITIONS
MIN. 9 - -6
TYP. 12 5 -3 - 4.7
MAX. - - +3 - -
UNIT dB mU dBm dB k
linear S11 variation; note 1
LOIN to RFIN at LO frequency; note 1 connected between VQUADLO and VCC balanced note 1 balanced; at 1750 MHz
40 0
Transmit section (transmit section enabled) ZLTX RLoTX RiTX TX IF typical load impedance return loss on matched TX IF output TX RF input resistance (real part of the parallel input impedance) TX RF input capacitance (imaginary part of the parallel input impedance) TX input frequency return loss on matched TX input note 1 conversion power gain differential transmitter inputs to differential transmitter IF outputs loaded with 500 differential note 2 note 2 note 2 double sideband; notes 2 and 3 LOIN to TXIN; note 1 TXIN to LOIN; note 1 - 11 - 500 15 65 - - - dB
CiTX
balanced; at 1750 MHz
-
1
-
pF
fiTX RLiTX GCPTX
1600 10 6
- 15 9
2000 - 12
MHz dB dB
foTX CP1TX IP2TX IP3TX NFTX ITX RITX Timing tstu Notes
TX output frequency 1 dB input compression point 2nd-order intercept point 3rd-order intercept point noise figure isolation reverse isolation
50 -25 - -20 - 40 40
- -22 +22 -16 5 - -
400 - - - 9 - -
MHz dBm dBm dBm dB dB dB s
start-up time of each block
1
5
20
1. Measured and guaranteed only on UAA2077BM demonstration board at Tamb = +25 C. 2. Measured and guaranteed only on UAA2077BM demonstration board. 3. This value includes printed-circuit board and balun losses. 4. Measured and guaranteed only on UAA2077BM demonstration board at Tamb = +25 C, with a 4.7 k resistor connected between VQUADLO and VCC.
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Figure 6 illustrates the electrical diagram of the UAA2077BM Philips demonstration board for DCS1800 applications. For measurement purposes all matching is to 50 . Different values will be used in a real application.
UAA2077BM
Product specification
Fig.6 Application diagram.
handbook, full pagewidth
1995 Dec 13
12 pF 22 pF 120 nH L5 TXOUT 93 MHz C13 22 pF L4 120 nH 3.9 pF 12 pF C26 C12 R1 560 C4 120 pF C11 12 pF C10 4V R2 560 1 2 C5 82 pF 4 5 16 4V C23 3.9 pF C24 IFB 17 R6 1200 C22 IFA 82 pF 56 nH L13 IF 188 MHz C25 12 pF L14 56 nH 4V 9 10 C30 8.2 pF TXON RXON 2 C20 2.2 pF 3.3 nH L9 C21 2.2 pF 3.3 nH L10 LOIN 1.55 to 1.75 GHz 4V
MBG014
L8 4.7 nH L3 180 nH L2 180 nH
Philips Semiconductors
C18
C16 1.8 pF
APPLICATION INFORMATION
TXIN 1.6 to 1.8 GHz 20 19 18 L11 100 nH
L7 4.7 nH
8.2 pF C17
8.2 pF
C15 1.8 pF 3
4V
L6 5.6 nH
C6 8.2 pF
2 GHz image rejecting front-end
C1
C2 1.2 pF L15 6.8 nH 6 7 8 12 11 C19 8.2 pF C29 8.2 pF 13 14 15 R7 1200 L12 100 nH
8.2 pF
UAA2077BM
RFIN 1.8 to 2 GHz
L1 5.6 nH
C3
11
C31 82 pF 2 1 C7 8.2 pF 1 R3 560 k C9 8.2 pF R5 560 k
8.2 pF
C14 1.2 pF
VQUADLO
C27 8.2 pF
C28 1 nF
SXON
R8 4.7 k
2
4V
1
C8 8.2 pF
R4 560 k
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UAA2077BM
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UAA2077BM
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UAA2077BM
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Dec 13
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Philips Semiconductors
Product specification
2 GHz image rejecting front-end
NOTES
UAA2077BM
1995 Dec 13
15
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Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40-2783749, Fax. (31)40-2788399 Brazil: Rua do Rocio 220 - 5th floor, Suite 51, CEP: 04552-903-SAO PAULO-SP, Brazil, P.O. Box 7383 (01064-970), Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Av. Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (852)2319 7888, Fax. (852)2319 7700 Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. (45)32 88 26 36, Fax. (45)31 57 19 49 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. (358)0-615 800, Fax. (358)0-61580 920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. Box 10 51 40, 20035 HAMBURG, Tel. (040)23 53 60, Fax. (040)23 53 63 00 Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 240 India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. (01)7640 000, Fax. (01)7640 200 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2 -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5130, Fax. (03)3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. (040)2783749, Fax. (040)2788399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries of Pakistan Ltd., Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (63) 2 816 6380, Fax. (63) 2 817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Rua dr. Antonio Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494 Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01)488 2211, Fax. (01)481 77 30 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. (0 212)279 27 70, Fax. (0212)282 67 07 Ukraine: Philips UKRAINE, 2A Akademika Koroleva str., Office 165, 252148 KIEV, Tel. 380-44-4760297, Fax. 380-44-4766991 United Kingdom: Philips Semiconductors LTD., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-2724825 SCDS47 (c) Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
413061/1100/03/pp16 Document order number: Date of release: 1995 Dec 13 9397 750 00526

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